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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
O. Ya. Belobrovaya, V. V. Galushka, A. L. Karagaychev, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, D. V. Terin, A. A. Mantsurov, “Nanostructured porous silicon layers formation at low doses of $\gamma$-radiation”, Izv. Sarat. Univ. Physics, 19:4 (2019), 312–316  |
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V. V. Galushka, A. E. Zharkova, D. V. Terin, V. I. Sidorov, E. I. Khasina, “Mechanisms of frequency-dependent conductivity of mesoporous silicon at $\gamma$ irradiation with small doses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 6–8  ; Tech. Phys. Lett., 45:6 (2019), 533–536 |
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2018 |
| 3. |
D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin, “Effect of low $\gamma$-radiation doses on the optical properties of porous silicon”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 349–352 ; Semiconductors, 52:3 (2018), 331–334 |
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2017 |
| 4. |
V. V. Galushka, A. E. Zharkova, D. V. Terin, V. I. Sidorov, E. I. Khasina, “The capacitive properties of structures based on mesoporous silicon irradiated by low-dose $\gamma$ rays”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 72–77 ; Tech. Phys. Lett., 43:11 (2017), 987–989 |
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D. I. Bilenko, V. V. Galushka, A. E. Zharkova, V. I. Sidorov, D. V. Terin, E. I. Khasina, “The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017), 57–63 ; Tech. Phys. Lett., 43:2 (2017), 166–168 |
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2015 |
| 6. |
D. I. Bilenko, V. V. Galushka, A. E. Zharkova, I. B. Mysenko, D. V. Terin, E. I. Khasina, “Specific features of the photoelectric properties of structures based on mesoporous silicon with silver nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:21 (2015), 80–87 ; Tech. Phys. Lett., 41:11 (2015), 1061–1064 |
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2014 |
| 7. |
D. I. Bilenko, V. V. Galushka, A. E. Zharkova, I. B. Mysenko, D. V. Terin, E. I. Khasina, “Photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1405–1408 ; Semiconductors, 48:10 (2014), 1370–1373 |
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2013 |
| 8. |
D. I. Bilenko, V. V. Galushka, A. E. Zharkova, I. B. Mysenko, D. V. Terin, E. I. Khasina, “Electrophysical properties of mesoporous silicon passivated by iron”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 644–648 ; Semiconductors, 47:5 (2013), 657–661 |
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