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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
M. Yu. Yesin, A. S. Deryabin, A. V. Kolesnikov, A. I. Nikiforov, “Study of Si(100) surface step convergence kinetics”, Fizika Tverdogo Tela, 65:2 (2023), 173–179   |
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2022 |
| 2. |
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 608–613 ; JETP Letters, 116:9 (2022), 628–633 |
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| 3. |
V. A. Zinovyev, A. S. Deryabin, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Structural and optical properties of two-dimensional Si and Ge layers formed by molecular beam epitaxy on CaF$_2$/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 748–752 |
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2019 |
| 4. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure”, Fizika Tverdogo Tela, 61:2 (2019), 284–287 ; Phys. Solid State, 61:2 (2019), 145–148 |
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2018 |
| 5. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413 ; Semiconductors, 52:3 (2018), 390–393 |
| 6. |
A. S. Deryabin, L. V. Sokolov, E. M. Trukhanov, K. B. Fritzler, “The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 30–36 ; Tech. Phys. Lett., 44:10 (2018), 916–918 |
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2015 |
| 7. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness”, Fizika Tverdogo Tela, 57:4 (2015), 746–752 ; Phys. Solid State, 57:4 (2015), 765–770 |
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2014 |
| 8. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer”, Fizika Tverdogo Tela, 56:2 (2014), 247–253 ; Phys. Solid State, 56:2 (2014), 247–253 |
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