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Agrinskaya, Nina Victorovna

Head Scientist Researcher
Doctor of physico-mathematical sciences (1989)
Speciality: 01.04.10 (Physcics of semiconductors)
E-mail:
Website: https://ioffe.ru/LNEPS/research/agrinskaya.html
   
Main publications:
  • Molekulyarnaya elektronika : ucheb. posobie / N. V. Agrinskaya ; Minobr RF, S.-Peterb. gos. politekhn. un-t. - SPb. : Izd-vo SPbGPU, 2004. - 109, [1] s. : il., tabl.; 20 sm.; ISBN 5-7422-0537-6

https://www.mathnet.ru/eng/person58704
List of publications on Google Scholar
https://elibrary.ru/author_items.asp?authorid=20521
https://www.researchgate.net/profile/N-Agrinskaya

Publications in Math-Net.Ru Citations
2019
1. N. V. Agrinskaya, V. I. Kozub, A. V. Shumilin, “Dynamic spin phenomena in complex structures based on ferromagnetic metals and semiconductors (scientific summary)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:7 (2019),  482–492  mathnet  elib; JETP Letters, 110:7 (2019), 495–504  isi  scopus 1
2018
2. N. V. Agrinskaya, A. A. Lebedev, S. P. Lebedev, M. A. Shakhov, E. Lahderanta, “Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1512–1517  mathnet  elib; Semiconductors, 52:12 (2018), 1616–1620
2017
3. N. V. Agrinskaya, V. I. Kozub, N. Yu. Mikhailin, D. V. Shamshur, “Spin-controlled negative magnetoresistance resulting from exchange interactions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017),  477–478  mathnet  elib; JETP Letters, 105:8 (2017), 484–487  isi  scopus 9
2015
4. N. V. Agrinskaya, V. I. Kozub, “Ferromagnetism mediated by the upper Hubbard band in selectively doped GaAs/AlGaAs structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:4 (2015),  250–252  mathnet  elib; JETP Letters, 102:4 (2015), 222–225  isi  scopus 1
2014
5. N. V. Agrinskaya, V. A. Berezotets, V. I. Kozub, “Positive magnetoresistance peaked at ferromagnetic transition in Mn-doped quantum wells GaAs/AlGaAs”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014),  186–193  mathnet  elib; JETP Letters, 100:3 (2014), 167–173  isi  elib  scopus 1
2013
6. N. V. Agrinskaya, V. I. Kozub, “Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:5 (2013),  342–350  mathnet  elib; JETP Letters, 98:5 (2013), 304–311  isi  elib  scopus
7. N. V. Agrinskaya, V. A. Berezotets, V. I. Kozub, I. S. Kotousova, A. A. Lebedev, S. P. Lebedev, A. A. Sitnikova, “Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  267–272  mathnet  elib; Semiconductors, 47:2 (2013), 301–306 12
2011
8. N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, “Suppression of the virtual anderson transition in the impurity band of doped quantum well structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011),  120–124  mathnet; JETP Letters, 94:2 (2011), 116–120  isi  scopus 4
2007
9. N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, “Virtual Anderson transition in a narrow impurity band of doped $p$-GaAs/AlGaAs layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007),  202–207  mathnet; JETP Letters, 85:3 (2007), 169–173  isi  scopus 9
2004
10. N. V. Agrinskaya, V. I. Kozub, D. S. Poloskin, A. V. Chernyaev, D. V. Shamshur, “Transition from strong to weak localization in the split-off impurity band in two-dimensional <i>p</i>-GaAs/AlGaAs structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:1 (2004),  36–40  mathnet; JETP Letters, 80:1 (2004), 30–34  scopus 16
2002
11. N. V. Agrinskaya, V. I. Kozub, V. M. Ustinov, A. V. Chernyaev, D. V. Shamshur, “Manifestation of coulomb gap in two-dimensional $p$-GaAs-AlGaAs structures with filled upper Hubbard band”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  420–424  mathnet; JETP Letters, 76:6 (2002), 360–364  scopus 5
1992
12. N. V. Agrinskaya, E. G. Guk, L. A. Remizova, “Evolution of the nonlinear optical properties of polydiacetylenes with variation of the chemical nature of nitrogen-containing substituents: a way to the nonlinear optical device optimization”, Fizika Tverdogo Tela, 34:10 (1992),  3042–3046  mathnet
1991
13. N. V. Agrinskaya, E. G. Guk, E. A. Drygailova, L. A. Remizova, V. M. Tuchkevich, “Preparation and optical properties of substituted polydiacetylene”, Fizika Tverdogo Tela, 33:9 (1991),  2770–2772  mathnet
1989
14. N. V. Agrinskaya, A. N. Aleshin, “VRH conduction in compensated $\mathrm{CdTe}:\mathrm{Cl}$”, Fizika Tverdogo Tela, 31:11 (1989),  277–280  mathnet
1987
15. B. Kh.-o. Bairamov, G. Irmer, I. Moneke, V. V. Toporov, N. V. Agrinskaya, S. A. Samedov, “Raman light scattering by coupled phonon-plasmon modes in $\mathrm{CdTe}$”, Fizika Tverdogo Tela, 29:7 (1987),  2201–2203  mathnet
1984
16. N. V. Agrinskaya, E. N. Arkadieva, V. P. Karpenko, O. A. Matveev, A. I. Terentev, “Effect of Traps on Current–Illumination Characteristics and Inertia of Photoresistance Based on Semi-Insulating Cadmium-Telluride Crystals”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  951–954  mathnet

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