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Publications in Math-Net.Ru |
Citations |
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2012 |
| 1. |
V. I. Sokolov, V. N. Churmanov, V. Yu. Ivanov, N. B. Gruzdev, P. S. Sokolov, A. N. Baranov, A. S. Moskvin, “Self-trapping of the $d$-$d$ charge transfer exciton in bulk NiO
evidenced by $X$-ray excited luminescence”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012), 595–600   ; JETP Letters, 95:10 (2012), 528–533   |
9
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1992 |
| 2. |
A. N. Baranov, T. I. Voronina, A. A. Gorelenok, T. S. Lagunova, A. M. Litvak, M. A. Sipovskaya, S. P. Starosel'tseva, V. A. Tikhomirova, V. V. Sherstnev, “Study of structure defects in indium-arsenide epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1612–1624 |
| 3. |
A. N. Baranov, T. N. Danilova, O. G. Ershov, A. N. Imenkov, V. V. Sherstnev, Yu. P. Yakovlev, “LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY
WHERE (LAMBDA=3.2-3.4 MU-M)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992), 6–10 |
| 4. |
I. A. Andreev, A. N. Baranov, M. P. Mikhailova, K. D. Moiseev, A. V. Pentsov, Y. P. Smorchkova, V. V. Sherstnev, Yu. P. Yakovlev, “UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL
RANGE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 50–53 |
| 5. |
A. N. Baranov, S. Y. Belkin, T. N. Danilova, O. G. Ershov, A. N. Imenkov, Yu. P. Yakovlev, “GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 18–24 |
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1991 |
| 6. |
A. N. Baranov, T. N. Danilova, O. G. Ershov, A. N. Imenkov, Yu. P. Yakovlev, “EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF
GAINASSB/GASB LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991), 54–59 |
|
1990 |
| 7. |
M. A. Afrailov, A. N. Baranov, A. P. Dmitriev, M. P. Mikhailova, Y. P. Smorchkova, I. N. Timchenko, V. V. Sherstnev, Yu. P. Yakovlev, I. N. Yassievich, “Узкозонные гетеропереходы II типа в системе твердых
растворов GaSb$-$InAs”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1397–1406 |
| 8. |
A. N. Titkov, V. N. Cheban, A. N. Baranov, A. A. Guseinov, Yu. P. Yakovlev, “Природа спонтанной электролюминесценции гетероструктур II-типа
GalnAsSb/GaSb”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1056–1061 |
| 9. |
A. N. Baranov, A. N. Dakhno, B. E. Djurtanov, T. S. Lagunova, M. A. Sipovskaya, Yu. P. Yakovlev, “Электрические и фотоэлектрические свойства твердых растворов
$p$-GaInSbAs”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 98–103 |
| 10. |
A. N. Baranov, A. N. Imenkov, O. P. Kapranchik, V. V. Negreskul, A. G. Chernyavskii, V. V. Sherstnev, Yu. P. Yakovlev, “LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS
(WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990), 42–47 |
| 11. |
V. G. Avetisov, A. N. Baranov, A. N. Imenkov, A. I. Nadezhdinskii, A. N. Khusnutdinov, Yu. P. Yakovlev, “CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB
INJECTION-LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 66–70 |
| 12. |
A. N. Baranov, A. A. Guseinov, A. M. Litvak, A. A. Popov, N. A. Charykov, V. V. Sherstnev, Yu. P. Yakovlev, “PREPARATION OF INX-GA1-X-ASY-SB1-Y SOLID-SOLUTIONS ISOPERIODIC TO CASB
NEAR THE IMMISCIBILITY BOUNDARY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990), 33–38 |
| 13. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, M. P. Mikhailova, K. D. Moiseev, I. N. Timchenko, V. E. Shestnev, V. E. Umanskii, Yu. P. Yakovlev, “UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF
2-3,5 MU-M”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 27–32 |
|
1989 |
| 14. |
A. Andaspaeva, A. N. Baranov, A. A. Guseinov, A. N. Imenkov, N. M. Kolchanova, E. A. Sidorenkova, Yu. P. Yakovlev, “HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF
1.8-2.4 MU-M (T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989), 71–75 |
| 15. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, N. N. Marinskaya, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND
MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 71–76 |
| 16. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, S. G. Konnikov, M. A. Mirsagatov, M. P. Mikhailova, O. V. Salata, V. B. Umanskii, G. M. Filaretova, Yu. P. Yakovlev, “SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF
1,5-2,3 MU-M”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989), 15–19 |
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1988 |
| 17. |
A. N. Baranov, E. A. Grebenshchikova, B. E. Djurtanov, T. N. Danilova, A. N. Imenkov, Yu. P. Yakovlev, “LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE
IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988), 1839–1843 |
| 18. |
A. N. Baranov, T. N. Danilova, B. E. Djurtanov, A. N. Imenkov, S. G. Konnikov, A. M. Litvak, V. E. Usmanskii, Yu. P. Yakovlev, “EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON
GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1671–1675 |
| 19. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION
AND MULTIPLICATION AREAS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 986–991 |
| 20. |
A. Andaspaeva, A. N. Baranov, A. Guseinov, A. N. Imenkov, L. M. Litvak, G. M. Filaretova, Yu. P. Yakovlev, “HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M,
ZETA=4-PERCENT, T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988), 845–849 |
| 21. |
I. A. Andreev, A. N. Baranov, M. A. Mirsagatov, M. P. Mikhailova, A. A. Rogachev, G. M. Filaretova, Yu. P. Yakovlev, “CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988), 389–393 |
| 22. |
A. N. Baranov, P. E. Dyshlovenko, A. A. Kopylov, V. V. Sherstnev, “LONG-WAVE OPTICAL-ABSORPTION IN P-GASB”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988), 64–68 |
|
1987 |
| 23. |
N. S. Averkiev, A. N. Baranov, A. N. Imenkov, A. A. Rogachev, Yu. P. Yakovlev, “Polarization of emission in quantum dimensional on one heterotransition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 332–337 |
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1985 |
| 24. |
A. N. Baranov, T. I. Voronina, N. S. Zimogorova, L. M. Kanskaya, Yu. P. Yakovlev, “Photoluminescence of Gallium-Antimonide Epitaxial
Layers Grown from the Melts Enriched
by Antimony”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1676–1679 |
| 25. |
A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev, “Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 502–506 |
| 26. |
N. T. Bagraev, A. N. Baranov, T. I. Voronina, Yu. N. Tolparov, Yu. P. Yakovlev, “Suppression of natural acceptors in $Ga\,Sb$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985), 117–121 |
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1984 |
| 27. |
A. N. Baranov, N. A. Bert, S. G. Konnikov, V. I. Litmanovich, T. S. Rogunova, Yu. P. Yakovlev, “NON-HOMOGENEOUS MULTIPLICATION IN CASCADE PHOTODIODES WITH THE
INCONGRUITY OF LATTICE PERIODS ON THE HETEROBOUNDARY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984), 1360–1364 |
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1983 |
| 28. |
A. N. Baranov, T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, Yu. M. Shernyakov, Yu. P. Yakovlev, “Спектральная зависимость коэффициента лавинного умножения
в варизонной $p{-}n$-структуре”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 753–755 |
| 29. |
A. N. Baranov, S. G. Konnikov, T. E. Popova, Yu. P. Yakovlev, “Мышьяк в Ga$_{1-x}$Al$_{x}$Sb$_{1-y}$As$_{y}$/GaSb: коэффициент
сегрегации и распределение по толщине эпитаксиальных слоев”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983), 645–648 |
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