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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
S. Yu. Karpov, G. Delakruz, V. E. Myachin, A. Y. Ostrovskii, Yu. V. Pogorel'skii, I. Y. Rusanovich, I. A. Sokolov, N. A. Strugov, A. L. Termartirosyan, G. A. Fokin, V. P. Chalyi, A. P. Shkurko, M. I. Etinberg, “LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY
METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 31–34  |
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1989 |
| 2. |
D. Z. Garbuzov, A. B. Gulakov, A. V. Kochergin, N. A. Strugov, V. P. Chalyi, “DOUBLE PUMPING OF INGAASP/GAAS-BASED YAG-LASERS (P1.06=320 MV,
EFFICIENCY-12-PERCENT)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 15–21 |
| 3. |
I. N. Arsent'ev, G. R. Bezhanishvili, P. P. Buinov, L. S. Vavilova, N. A. Strugov, V. P. Chalyi, A. P. Shkurko, “SPECTRAL CHARACTERISTICS OF INGAASP/GAAS(111) LPE-LASERS
(LAMBDA=0.8MU-M) DESIGNED FOR THE PUMPING OF YAG-ND3+”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 45–49 |
| 4. |
D. Z. Garbuzov, V. V. Dedysh, A. V. Kochergin, N. V. Kravtsov, O. E. Nanii, V. E. Nadtocheev, N. A. Strugov, V. V. Firsov, A. N. Shelaev, “Garnet chip laser pumped by an InGaAsP/GaAs laser”, Kvantovaya Elektronika, 16:12 (1989), 2423–2425 [Sov J Quantum Electron, 19:12 (1989), 1557–1558  ] |
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1988 |
| 5. |
Z. I. Alferov, D. Z. Garbuzov, S. N. Zhigulin, I. A. Kuzmin, B. B. Orlov, M. A. Sinicin, N. A. Strugov, V. E. Tokranov, B. S. Yavich, “Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные
МОС гидридным методом. Квантовый выход люминесценции и пороги генерации”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2111–2117 |
| 6. |
Zh. I. Alfrove, N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. I. Kolyshkin, T. A. Nalet, N. A. Strugov, A. V. Tikunov, “Квантово-размерные
InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения
(${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1031–1034 |
| 7. |
T. I. Voronina, T. S. Lagunova, B. E. Samorukov, N. A. Strugov, “Свойства эпитаксиальных слоев арсенида галлия, легированных
редкоземельными элементами”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 147–150 |
| 8. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. I. Kolyshkin, A. B. Komissarov, A. V. Kochergin, T. A. Nalet, N. A. Strugov, “POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR
(IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 699–702 |
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1987 |
| 9. |
Zh. I. Alferov, D. Z. Garbuzov, N. Yu. Daviduk, S. V. Zaitsev, A. B. Nivin, A. V. Ovchinnikov, N. A. Strugov, I. S. Tarasov, “Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 552–557 |
| 10. |
D. Z. Garbuzov, S. V. Zaitsev, N. D. Il'inskaya, K. Yu. Kizhaev, A. B. Nivin, A. V. Ovchinnikov, N. A. Strugov, I. S. Tarasov, “Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 535–537 |
| 11. |
Zh. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, N. A. Strugov, A. V. Tikunov, E. I. Chudinova, “Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method
($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 372–374 |
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