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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 1, Pages 43–48 (Mi phts1549)  
Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors

M. V. Strikha, I. N. Yassievich

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (660 kB)
Received: 05.04.1983
Accepted: 19.04.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: M. V. Strikha, I. N. Yassievich, “Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 43–48
Citation in format AMSBIB
\Bibitem{StrYas84}
\by M.~V.~Strikha, I.~N.~Yassievich
\paper Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 1
\pages 43--48
\mathnet{http://mi.mathnet.ru/phts1549}
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