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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 1, Pages 147–148 (Mi phts1568)  
Short Notes

Impulsive Operation Mode of Photoresistive Elements Based on $p$-Type Silicon Compensated by Radiation-Induced Centers

S. V. Bezlyudnyi, N. V. Kolesnikov, Yu. N. Rozanov

Leningrad Polytechnical Institute
Full-text PDF (276 kB)
Received: 30.11.1982
Accepted: 17.06.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: S. V. Bezlyudnyi, N. V. Kolesnikov, Yu. N. Rozanov, “Impulsive Operation Mode of Photoresistive Elements Based on $p$-Type Silicon Compensated by Radiation-Induced Centers”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 147–148
Citation in format AMSBIB
\Bibitem{BezKolRoz84}
\by S.~V.~Bezlyudnyi, N.~V.~Kolesnikov, Yu.~N.~Rozanov
\paper Impulsive Operation Mode of Photoresistive Elements Based on $p$-Type Silicon Compensated by Radiation-Induced Centers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 1
\pages 147--148
\mathnet{http://mi.mathnet.ru/phts1568}
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