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Fizika i Tekhnika Poluprovodnikov, 1986, Volume 20, Issue 7, Pages 1205–1208 (Mi phts284)  
Trapping of Hot Electrons by Impurity Centers in Semi-Insulating $n$-type GaAs

A. A. Ptashchenko, V. I. Maryutin

I. I. Mechnikov Odessa State University
Full-text PDF (520 kB)
Received: 12.12.1985
Accepted: 02.01.1986
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: A. A. Ptashchenko, V. I. Maryutin, “Trapping of Hot Electrons by Impurity Centers in Semi-Insulating $n$-type GaAs”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1205–1208
Citation in format AMSBIB
\Bibitem{PtaMar86}
\by A.~A.~Ptashchenko, V.~I.~Maryutin
\paper Trapping of Hot Electrons by Impurity Centers in Semi-Insulating $n$-type GaAs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1986
\vol 20
\issue 7
\pages 1205--1208
\mathnet{http://mi.mathnet.ru/phts284}
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