A. M. Kreschuk, E. P. Laurs, S. V. Novikov, I. G. Savelev, E. M. Semashko, M. A. Stovpovoi, A. Ya. Shik, “Инвертированная гетероструктура InP/In$_{0.53}$Ga$_{0.47}$As для полевого транзистора”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1145

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Fizika i Tekhnika Poluprovodnikov, 1990, Volume 24, Issue 6, Pages 1145–1147 (Mi phts3905)

Short Notes

Инвертированная гетероструктура InP/In$_{0.53}$Ga$_{0.47}$As для полевого транзистора

A. M. Kreschuk, E. P. Laurs, S. V. Novikov, I. G. Savelev, E. M. Semashko, M. A. Stovpovoi, A. Ya. Shik

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Document Type: Article

Language: Russian

Citation: A. M. Kreschuk, E. P. Laurs, S. V. Novikov, I. G. Savelev, E. M. Semashko, M. A. Stovpovoi, A. Ya. Shik, “Инвертированная гетероструктура InP/In$_{0.53}$Ga$_{0.47}$As для полевого транзистора”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1145–1147

Citation in format AMSBIB

\Bibitem{NovShi90}

\by A.~M.~Kreschuk, E.~P.~Laurs, S.~V.~Novikov, I.~G.~Savelev, E.~M.~Semashko, M.~A.~Stovpovoi, A.~Ya.~Shik

\paper Инвертированная гетероструктура InP/In$_{0.53}$Ga$_{0.47}$As для

полевого транзистора

\jour Fizika i Tekhnika Poluprovodnikov

\yr 1990

\vol 24

\issue 6

\pages 1145--1147

\mathnet{http://mi.mathnet.ru/phts3905}

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https://www.mathnet.ru/eng/phts/v24/i6/p1145

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