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Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 2, Pages 339–351 (Mi phts4591)  
On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon

A. O. Konstantinov

Ioffe Institute, St. Petersburg
Full-text PDF (1721 kB)
Received: 04.09.1991
Accepted: 05.09.1991
Document Type: Article
Language: Russian
Citation: A. O. Konstantinov, “On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 339–351
Citation in format AMSBIB
\Bibitem{Kon92}
\by A.~O.~Konstantinov
\paper On the cause of origination of phosphorus diffusion profile near-surface plateau in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1992
\vol 26
\issue 2
\pages 339--351
\mathnet{http://mi.mathnet.ru/phts4591}
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  • https://www.mathnet.ru/eng/phts/v26/i2/p339
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