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Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 2, Pages 352–357 (Mi phts4592)  
Effect of ion implantation of compensating impurity on $n^{+}$-GaAs optical properties

E. F. Venger, A. V. Goncharenko, N. L. Dmitruk, A. Yu. Prokof'ev, N. A. Fidrya

Institute of Semiconductor Physics NAS, Kiev
Full-text PDF (643 kB)
Received: 25.02.1991
Accepted: 16.09.1991
Document Type: Article
Language: Russian
Citation: E. F. Venger, A. V. Goncharenko, N. L. Dmitruk, A. Yu. Prokof'ev, N. A. Fidrya, “Effect of ion implantation of compensating impurity on $n^{+}$-GaAs optical properties”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 352–357
Citation in format AMSBIB
\Bibitem{VenGonDmi92}
\by E.~F.~Venger, A.~V.~Goncharenko, N.~L.~Dmitruk, A.~Yu.~Prokof'ev, N.~A.~Fidrya
\paper Effect of ion implantation of compensating impurity on $n^{+}$-GaAs optical properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1992
\vol 26
\issue 2
\pages 352--357
\mathnet{http://mi.mathnet.ru/phts4592}
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