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Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 3, Pages 574–577 (Mi phts4635)  
Short Notes

Processes of radiation-induced defect formation in Si: Ge at 4.2, 78 and 300 K

V. G. Golubev, V. V. Emtsev, P. M. Klinger, G. I. Kropotov, Yu. V. Shmartsev

Ioffe Institute, St. Petersburg
Full-text PDF (413 kB)
Received: 18.10.1991
Accepted: 31.10.1991
Document Type: Article
Language: Russian
Citation: V. G. Golubev, V. V. Emtsev, P. M. Klinger, G. I. Kropotov, Yu. V. Shmartsev, “Processes of radiation-induced defect formation in Si: Ge at 4.2, 78 and 300 K”, Fizika i Tekhnika Poluprovodnikov, 26:3 (1992), 574–577
Citation in format AMSBIB
\Bibitem{GolEmtKli92}
\by V.~G.~Golubev, V.~V.~Emtsev, P.~M.~Klinger, G.~I.~Kropotov, Yu.~V.~Shmartsev
\paper Processes of radiation-induced defect formation in Si: Ge at 4.2, 78 and 300\,K
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1992
\vol 26
\issue 3
\pages 574--577
\mathnet{http://mi.mathnet.ru/phts4635}
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