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Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 4, Pages 611–613 (Mi phts4640)  
Gunn diodes based on $n$-InGaAs$/n^{+}$-InP heterostructure

V. I. Borisov, A. T. Gorelenok, S. G. Dmitriev, V. E. Lyubchenko, D. N. Rehviashvili, A. S. Rogashkov

Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department
Full-text PDF (371 kB)
Received: 27.06.1991
Accepted: 23.10.1991
Document Type: Article
Language: Russian
Citation: V. I. Borisov, A. T. Gorelenok, S. G. Dmitriev, V. E. Lyubchenko, D. N. Rehviashvili, A. S. Rogashkov, “Gunn diodes based on $n$-InGaAs$/n^{+}$-InP heterostructure”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 611–613
Citation in format AMSBIB
\Bibitem{BorGorDmi92}
\by V.~I.~Borisov, A.~T.~Gorelenok, S.~G.~Dmitriev, V.~E.~Lyubchenko, D.~N.~Rehviashvili, A.~S.~Rogashkov
\paper Gunn diodes based on $n$-InGaAs$/n^{+}$-InP heterostructure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1992
\vol 26
\issue 4
\pages 611--613
\mathnet{http://mi.mathnet.ru/phts4640}
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