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Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 8, Pages 1409–1414 (Mi phts4766)  
Electric and photoluminescent properties of $\text{GaSb}\langle\text{Bi}\rangle$ and $\text{GaSb}\langle\text{Bi,Sn}\rangle$ epitaxial layers produced from bismuth solutions

R. Kh. Akchurin, V. A. Zhegalin, V. V. Chaldyshev

M. V. Lomonosov Moscow State Academy of Fine Chemical Technology
Full-text PDF (628 kB)
Received: 21.02.1992
Accepted: 02.03.1992
Document Type: Article
Language: Russian
Citation: R. Kh. Akchurin, V. A. Zhegalin, V. V. Chaldyshev, “Electric and photoluminescent properties of $\text{GaSb}\langle\text{Bi}\rangle$ and $\text{GaSb}\langle\text{Bi,Sn}\rangle$ epitaxial layers produced from bismuth solutions”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1409–1414
Citation in format AMSBIB
\Bibitem{AkcZheCha92}
\by R.~Kh.~Akchurin, V.~A.~Zhegalin, V.~V.~Chaldyshev
\paper Electric and photoluminescent properties of $\text{GaSb}\langle\text{Bi}\rangle$ and $\text{GaSb}\langle\text{Bi,Sn}\rangle$ epitaxial layers produced from bismuth solutions
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1992
\vol 26
\issue 8
\pages 1409--1414
\mathnet{http://mi.mathnet.ru/phts4766}
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