Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP

The results of a study of the electroluminescence of the asymmetric InAs/InAs$_{1-y}$Sb$_y$/InAsSbP LED heterostructures with a molar fraction of InSb in the ternary solid solution in the active region $y$ = 0.15 and $y$ = 0.16 in the temperature range 4.2–300 K are presented. Based on the experimental data, the formation of a staggered type II heterojunction at the InAs/InAs$_{1-y}$Sb$_y$/InAsSbP heterointerface was determined. The dominant contribution of the interface radiative transitions at the type II heterointerface in the temperature range 4.2–180 K was shown, which makes it possible to minimize the temperature dependence of the operating wavelength of the LEDs.