Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages

Results of studies of silicon–silicon-ultrathin oxide (42 $\mathring{\mathrm{A}}$) – polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 $\mathring{\mathrm{A}}$. The current, flowing through SiO$_2$, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 $\mathring{\mathrm{A}}$ SiO$_2$ is more pronounced than in structures with an oxide of 37 $\mathring{\mathrm{A}}$. An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide–polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.