Effect of electron–phonon interaction and $\gamma$-ray irradiation on the reverse currents of silicon photodiodes

The current–voltage characteristics of silicon photodiodes before and after irradiation by $\gamma$-quanta with an energy of 1.25 MeV and an irradiation dose of 0.5 mrad are investigated. It is established that the reverse currents are determined by the Poole–Frenkel mechanism in a strong electric field with the influence of electron–phonon interaction. A procedure is developed and the parameters of the electron–phonon interaction described by the single-coordinate configuration model are calculated from the reverse current–voltage characteristics. It is assumed that divacancy-oxygen centers in silicon, which determine the reverse photodiode currents, are formed due to $\gamma$-ray irradiation.