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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 1, Pages 75–82
DOI: https://doi.org/10.21883/FTP.2021.01.50390.9521 (Mi phts5099) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

High-power Schottky diodes with a negative-differential-resistance portion in the I–V characteristic

A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov

National Research University "Moscow Power Engineering Institute", Moscow, Russia
Full-text PDF (210 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.01.50390.9521
Abstract: It is shown that, in the base region of Schottky diodes, at current densities $j$ higher than a certain value $j_{st1}$, quasi-neutral drift-stimulated diffusion is implemented along with diffusion transport. The effect of this newly discovered mode in the I–V characteristics of Schottky diodes at high current densities is investigated. It is demonstrated that, when the ratio between the base width $W$ and the ambipolar diffusion length $L$ is higher than unity, a negative-differential-resistance portion appears in the I–V characteristics of Schottky diodes. The results of the analytical study are checked and confirmed by numerical calculation.
Keywords: modes of carrier transport in semiconductors, high-power Schottky diodes, I–V characteristic, effect of the carrier transport mode on the characteristics of high-power structures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation FSWF-2020-0022
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. FSWF-2020-0022.
Received: 09.09.2020
Revised: 14.09.2020
Accepted: 18.09.2020
English version:
Semiconductors, 2021, Volume 55, Issue 1, Pages 92–99
DOI: https://doi.org/10.1134/S1063782621010164
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov, “High-power Schottky diodes with a negative-differential-resistance portion in the I–V characteristic”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 75–82; Semiconductors, 55:1 (2021), 92–99
Citation in format AMSBIB
\Bibitem{TanÌnaYur21}
\by A.~G.~Tandoev, T.~T.~Ìnatsakanov, S.~N.~Yurkov
\paper High-power Schottky diodes with a negative-differential-resistance portion in the I--V characteristic
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 1
\pages 75--82
\mathnet{http://mi.mathnet.ru/phts5099}
\crossref{https://doi.org/10.21883/FTP.2021.01.50390.9521}
\elib{https://elibrary.ru/item.asp?id=44862608}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 1
\pages 92--99
\crossref{https://doi.org/10.1134/S1063782621010164}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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