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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Pages 1296–1301
DOI: https://doi.org/10.21883/FTP.2020.12.50228.9508a (Mi phts5103) 		 
This article is cited in 17 scientific papers (total in 17 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Structure of germanium monoxide thin films

K. N. Astankovaa, V. A. Volodinab, I. A. Azarovab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (620 kB) Citations (17)
DOI: https://doi.org/10.21883/FTP.2020.12.50228.9508a
Abstract: By means of optical (Raman spectroscopy, IR spectroscopy, X-ray photoelectron spectroscopy) and electron microscopic methods, it was found that the atomic structure of stoichiometric germanium monoxide films corresponds to the random bonding model, without the formation of germanium nanoclusters. This structure is metastable and transforms into a structure which is close to random mixture model at a temperature 260$^\circ$C and higher. The metastability of solid GeO may be related to the presence of internal mechanical stresses in the atomic network.
Keywords: germanium monoxide, metastability, random bonding model.
Funding agency Grant number
Russian Science Foundation 18-49-08001
Ministry of Education and Science of the Russian Federation 2020-1902-01-058
The part of the study concerned with XPS measurements was supported by the Russian Science Foundation, project no. 18-49-08001. The part of the study concerned with Raman spectroscopy was supported by the Ministry of Education and Science of the Russian Federation, project no. 2020-1902-01-058.
Received: 24.08.2020
Revised: 28.08.2020
Accepted: 28.08.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1555–1560
DOI: https://doi.org/10.1134/S1063782620120027
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. N. Astankova, V. A. Volodin, I. A. Azarov, “Structure of germanium monoxide thin films”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1296–1301; Semiconductors, 54:12 (2020), 1555–1560
Citation in format AMSBIB
\Bibitem{AstVolAza20}
\by K.~N.~Astankova, V.~A.~Volodin, I.~A.~Azarov
\paper Structure of germanium monoxide thin films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1296--1301
\mathnet{http://mi.mathnet.ru/phts5103}
\crossref{https://doi.org/10.21883/FTP.2020.12.50228.9508a}
\elib{https://elibrary.ru/item.asp?id=44368063}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1555--1560
\crossref{https://doi.org/10.1134/S1063782620120027}
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    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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