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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Pages 1117–1121
DOI: https://doi.org/10.21883/FTP.2020.10.49954.28 (Mi phts5147) 		 
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains

N. V. Sibireva, Yu. S. Berdnikovb, V. N. Sibirevc

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Saint Petersburg State University
c Saint-Petersburg State Mining Institute
Full-text PDF (270 kB)
DOI: https://doi.org/10.21883/FTP.2020.10.49954.28
Abstract: In this work, the influence of elastic strain on Ga(As,P) nanowire crystal structure was studied. The stable growth of nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of newly-forming nanowire layer. Within this approach, the crystal phase switching in GaP nanowire after Ga(AsP) insertion is explained.
Keywords: crystalline nanowires, polytypism, gallium phosphide, wurtzite.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 05.617.21.0058
This study was supported by the Ministry of Education and Science of the Russian Federation (agreement 05.617.21.0058, December 5, 2019, unique project identifier RFMEFI61719X0058).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 10, Pages 1320–1324
DOI: https://doi.org/10.1134/S1063782620100267
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Sibirev, Yu. S. Berdnikov, V. N. Sibirev, “Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1117–1121; Semiconductors, 54:10 (2020), 1320–1324
Citation in format AMSBIB
\Bibitem{SibBerSib20}
\by N.~V.~Sibirev, Yu.~S.~Berdnikov, V.~N.~Sibirev
\paper Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 10
\pages 1117--1121
\mathnet{http://mi.mathnet.ru/phts5147}
\crossref{https://doi.org/10.21883/FTP.2020.10.49954.28}
\elib{https://elibrary.ru/item.asp?id=44041224}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 10
\pages 1320--1324
\crossref{https://doi.org/10.1134/S1063782620100267}
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