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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Pages 1122–1128
DOI: https://doi.org/10.21883/FTP.2020.10.49955.29 (Mi phts5148) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties

A. E. Klimovab, A. N. Akimova, I. O. Akhundova, V. A. Golyashovac, D. V. Gorshkova, D. V. Ishchenkoa, E. V. Matyushenkoa, I. G. Neizvestnyiab, G. Yu. Sidorova, S. P. Supruna, A. S. Tarasova, O. E. Tereshchenkoac, V. S. Epova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
Full-text PDF (410 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.10.49955.29
Abstract: The characteristics of MIS structures based on insulating PbSnTe:In films with compositions in the vicinity of a band inversion grown by molecular beam epitaxy (MBE) were studied. It has been shown that a number of their features can be caused by a ferroelectric phase transition with a Curie temperature in the range T $\approx$ 15–20 K.
Keywords: solid solution PbSnTe:In, field effect, MIS structure, ferroelectric phase transition.
Funding agency Grant number
Russian Foundation for Basic Research 20-02-00324
Russian Science Foundation 17-12-01047
The work was carried out under partial financial support of the Russian Foundation for Basic Research (grant no. 20-02-00324) and the Russian Science Foundation (grant no. 17-12-01047).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 10, Pages 1325–1331
DOI: https://doi.org/10.1134/S1063782620100164
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov, “Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1122–1128; Semiconductors, 54:10 (2020), 1325–1331
Citation in format AMSBIB
\Bibitem{KliAkiAkh20}
\by A.~E.~Klimov, A.~N.~Akimov, I.~O.~Akhundov, V.~A.~Golyashov, D.~V.~Gorshkov, D.~V.~Ishchenko, E.~V.~Matyushenko, I.~G.~Neizvestnyi, G.~Yu.~Sidorov, S.~P.~Suprun, A.~S.~Tarasov, O.~E.~Tereshchenko, V.~S.~Epov
\paper Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 10
\pages 1122--1128
\mathnet{http://mi.mathnet.ru/phts5148}
\crossref{https://doi.org/10.21883/FTP.2020.10.49955.29}
\elib{https://elibrary.ru/item.asp?id=44041225}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 10
\pages 1325--1331
\crossref{https://doi.org/10.1134/S1063782620100164}
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