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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 10, Pages 1139–1144
DOI: https://doi.org/10.21883/FTP.2020.10.49958.40 (Mi phts5151) 		 
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells

M. V. Dorokhina, P. B. Deminaa, Yu. A. Danilova, O. V. Vikhrovaa, Yu. M. Kuznetsova, M. V. Veda, F. Iikawab, M. A. G. Balantaa

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Instituto do Fisica "Gleb Watagin", UNICAMP, 777 Sérgio Buarque de Holanda Street – Cidade Universitária Zeferino Vaz, Barão Geraldo, Campinas, Brazil
Full-text PDF (309 kB)
DOI: https://doi.org/10.21883/FTP.2020.10.49958.40
Abstract: We present the results of time-resolved photoluminescence measurements carried out for semiconductor heterostructures containing two non-interacting quantum wells in the GaAs matrix: an undoped InGaAs quantum well and a quantum well uniformly doped with chromium atoms (InGaAs : Cr). It has been shown that the introduction of Cr significantly affects the recombination lifetime of carriers in quantum wells. The change in the intensity of photoluminescence, starting from the moment of excitation, is not described by a monoexponential decay function, which is explained by a change in the built-in electric field of the surface barrier in quantum wells due to screening by photoexcited carriers.
Keywords: photoluminescence, heterostructures, quantum wells, admixture of Cr.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation МД-1708.2019.2
Russian Foundation for Basic Research 20-38-70063
The study was supported by the President of the Russian Federation, grant no. MD-1708.2019.2, the Russian Foundation for Basic Research, project no. 20-38-70063, and by the FAPEMIG grants CEX-APQ-00753-18.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 10, Pages 1341–1346
DOI: https://doi.org/10.1134/S1063782620100061
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta, “Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144; Semiconductors, 54:10 (2020), 1341–1346
Citation in format AMSBIB
\Bibitem{DorDemDan20}
\by M.~V.~Dorokhin, P.~B.~Demina, Yu.~A.~Danilov, O.~V.~Vikhrova, Yu.~M.~Kuznetsov, M.~V.~Ved, F.~Iikawa, M.~A.~G.~Balanta
\paper Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 10
\pages 1139--1144
\mathnet{http://mi.mathnet.ru/phts5151}
\crossref{https://doi.org/10.21883/FTP.2020.10.49958.40}
\elib{https://elibrary.ru/item.asp?id=44041229}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 10
\pages 1341--1346
\crossref{https://doi.org/10.1134/S1063782620100061}
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