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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 902–905
DOI: https://doi.org/10.21883/FTP.2020.09.49829.21 (Mi phts5168) 		 
This article is cited in 6 scientific papers (total in 6 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties

G. E. Cirlinabcd, R. R. Reznikd, A. E. Zhukova, R. A. Khabibulline, K. V. Marem'yaninfg, V. I. Gavrilenkofg, S. V. Morozovfg

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Saint-Petersburg Scientific Center, Russian Academy of Sciences
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
e V. G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
f Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
g Lobachevsky State University of Nizhny Novgorod
Full-text PDF (451 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2020.09.49829.21
Abstract: Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of $\sim$3 THz up to a temperature of $\sim$60 K.
Keywords: quantum cascade laser, molecular beam epitaxy, terahertz radiation, semiconductor nanostructures.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations
Russian Science Foundation 18-19-00493
Measurements of the laser structures were performed with the support from the Russian Science Foundation, project no. 18-19-00493.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1092–1095
DOI: https://doi.org/10.1134/S1063782620090298
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Marem'yanin, V. I. Gavrilenko, S. V. Morozov, “Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 902–905; Semiconductors, 54:9 (2020), 1092–1095
Citation in format AMSBIB
\Bibitem{CirRezZhu20}
\by G.~E.~Cirlin, R.~R.~Reznik, A.~E.~Zhukov, R.~A.~Khabibullin, K.~V.~Marem'yanin, V.~I.~Gavrilenko, S.~V.~Morozov
\paper Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 902--905
\mathnet{http://mi.mathnet.ru/phts5168}
\crossref{https://doi.org/10.21883/FTP.2020.09.49829.21}
\elib{https://elibrary.ru/item.asp?id=44154196}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1092--1095
\crossref{https://doi.org/10.1134/S1063782620090298}
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    • This publication is cited in the following 6 articles:
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