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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 945–951
DOI: https://doi.org/10.21883/FTP.2020.09.49837.31 (Mi phts5176) 		 
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures

I. Yu. Zabavichevab, A. S. Puzanovab, S. V. Obolenskyab, V. A. Kozlovc

a Lobachevsky State University of Nizhny Novgorod
b Sedakov Research Institute of Measuring Systems, Branch of the Federal Nuclear All-Russian Research Institute of Experimental Physics, 603950, Nizhny Novgorod, Russia
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (255 kB)
DOI: https://doi.org/10.21883/FTP.2020.09.49837.31
Abstract: The change in the carrier mobility in GaAs structures after irradiation is numerically simulated. For each investigated scattering potential, the model parameters are determined at which the calculation data are consistent with the results of the experiment. It is shown for the first time that the form of the potential of scattering at radiation-induced defects determines the time and space dynamics of the velocity overshoot in short structures.
Keywords: Monte-Carlo method, radiation defect cluster, overshoot velocity effect.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-15-2020-529
This work was supported by the Ministry of Science and Higher Education of the Russian Federation, federal target program “Research and Development in Priority Directions of the Scientific and Technological Complex of Russia for 2014–2020”, unique project identifier RFMEFI62020X0003, agreement no. 075-15-2020-529.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1134–1140
DOI: https://doi.org/10.1134/S1063782620090328
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951; Semiconductors, 54:9 (2020), 1134–1140
Citation in format AMSBIB
\Bibitem{ZabPuzObo20}
\by I.~Yu.~Zabavichev, A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 945--951
\mathnet{http://mi.mathnet.ru/phts5176}
\crossref{https://doi.org/10.21883/FTP.2020.09.49837.31}
\elib{https://elibrary.ru/item.asp?id=44154204}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1134--1140
\crossref{https://doi.org/10.1134/S1063782620090328}
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