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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Pages 801–806
DOI: https://doi.org/10.21883/FTP.2020.08.49629.05 (Mi phts5199) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

B. N. Zvonkova, O. V. Vikhrovaa, Yu. A. Danilova, M. V. Dorokhina, P. B. Deminaa, M. N. Drozdovb, A. V. Zdoroveyshcheva, R. N. Kriukova, A. V. Nezhdanovc, I. N. Antonova, S. M. Plankinac, M. P. Temiryazevad

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Lobachevsky State University of Nizhny Novgorod
d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Full-text PDF (446 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.08.49629.05
Abstract: A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl$_4$) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained by Raman spectroscopy, it can be conceived that the carbon layers produced by this method are the disordered nanocrystalline graphite. It is shown that such carbon layers can be used in the technological cycle of the production of gallium-arsenide optoelectronic device structures (among them spin light-emitting diodes with a CoPt injector).
Keywords: carbon films, MOCVD, GaAs device structures.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-19137_мк
Russian Science Foundation 17-79-20173
The study was supported in part by the Russian Foundation for Basic Research, project no. 18-29-19137_mk. The part of the study concerned with the formation of SLED structures was supported by the Russian Science Foundation, project no. 17-79-20173.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 956–960
DOI: https://doi.org/10.1134/S106378262008028X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806; Semiconductors, 54:8 (2020), 956–960
Citation in format AMSBIB
\Bibitem{ZvoVikDan20}
\by B.~N.~Zvonkov, O.~V.~Vikhrova, Yu.~A.~Danilov, M.~V.~Dorokhin, P.~B.~Demina, M.~N.~Drozdov, A.~V.~Zdoroveyshchev, R.~N.~Kriukov, A.~V.~Nezhdanov, I.~N.~Antonov, S.~M.~Plankina, M.~P.~Temiryazeva
\paper Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 801--806
\mathnet{http://mi.mathnet.ru/phts5199}
\crossref{https://doi.org/10.21883/FTP.2020.08.49629.05}
\elib{https://elibrary.ru/item.asp?id=43800756}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 956--960
\crossref{https://doi.org/10.1134/S106378262008028X}
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