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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 7, Pages 648–653
DOI: https://doi.org/10.21883/FTP.2020.07.49505.9388 (Mi phts5207) 		 
Surface, interfaces, thin films

AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient

L. S. Lunina, M. L. Luninaa, D. L. Alfimovaa, A. S. Pashchenkoa, O. S. Pashchenkoa, N. M. Bogatovb

a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Kuban State University, Krasnodar
Full-text PDF (146 kB)
DOI: https://doi.org/10.21883/FTP.2020.07.49505.9388
Abstract: Growth of AlGaInSbAs solid solutions on InAs substrates from liquid phase in a temperature gradient field is discussed. There are calculated parameters and studied luminescent properties and spectral characteristics of AlGaInSbAs solid solutions isoperiodic to InAs substrates. Within the model of regular solutions, an analysis of heterophased neutrality in Al–Ga–In–Sb–As system is carried out. Regions of hermodynamic stability to spinodal decomposition of AlGaInSbAs solid solutions and isoperiodicity intervals to InAs substrate are revealed.
Keywords: AlGaInSbAs solid solutions, phase equilibria, crystallochemical properties, energy band gap, spectral characteristic, photoluminescence.
Funding agency Grant number
Russian Science Foundation 19-79-10024
Russian Foundation for Basic Research 20-08-00108
Theoretical analysis and investigation into the growth kinetics are supported by the Russian Scientific Fund, project no. 19-79-10024, and investigation of the spectral dependences are supported by the Russian Foundation for Basic Research, project no. 20-08-00108.
Received: 03.03.2020
Revised: 10.03.2020
Accepted: 10.03.2020
English version:
Semiconductors, 2020, Volume 54, Issue 7, Pages 759–764
DOI: https://doi.org/10.1134/S1063782620070088
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko, N. M. Bogatov, “AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 648–653; Semiconductors, 54:7 (2020), 759–764
Citation in format AMSBIB
\Bibitem{LunLunAlf20}
\by L.~S.~Lunin, M.~L.~Lunina, D.~L.~Alfimova, A.~S.~Pashchenko, O.~S.~Pashchenko, N.~M.~Bogatov
\paper AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 7
\pages 648--653
\mathnet{http://mi.mathnet.ru/phts5207}
\crossref{https://doi.org/10.21883/FTP.2020.07.49505.9388}
\elib{https://elibrary.ru/item.asp?id=43808038}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 7
\pages 759--764
\crossref{https://doi.org/10.1134/S1063782620070088}
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