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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 7, Pages 663–669
DOI: https://doi.org/10.21883/FTP.2020.07.49507.9350 (Mi phts5209) 		 
Semiconductor structures, low-dimensional systems, quantum phenomena

2D SiC/Si structure: electron states and adsorbability

S. Yu. Davydova, A. V. Zubovb

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (201 kB)
DOI: https://doi.org/10.21883/FTP.2020.07.49507.9350
Abstract: A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.
Keywords: two-dimensional hexagonal layers, semiconductor substrate, density of states, adsorption.
Received: 20.01.2020
Revised: 20.02.2020
Accepted: 20.02.2020
English version:
Semiconductors, 2020, Volume 54, Issue 7, Pages 774–781
DOI: https://doi.org/10.1134/S1063782620070039
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Yu. Davydov, A. V. Zubov, “2D SiC/Si structure: electron states and adsorbability”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 663–669; Semiconductors, 54:7 (2020), 774–781
Citation in format AMSBIB
\Bibitem{DavZub20}
\by S.~Yu.~Davydov, A.~V.~Zubov
\paper 2D SiC/Si structure: electron states and adsorbability
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 7
\pages 663--669
\mathnet{http://mi.mathnet.ru/phts5209}
\crossref{https://doi.org/10.21883/FTP.2020.07.49507.9350}
\elib{https://elibrary.ru/item.asp?id=43808040}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 7
\pages 774--781
\crossref{https://doi.org/10.1134/S1063782620070039}
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