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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Low-dimensional silicon-carbide structures: analytical estimates of electron-spectrum characteristics
S. Yu. Davydov Ioffe Institute, St. Petersburg
Abstract:
Using the Green's function method within the tight-binding approximation, the electronic structure of an infinite silicon-carbide sheet, and nanoribbons and one-dimensional chains cut from it, is considered. Analytical expressions for band gaps, electron effective masses and characteristic velocities are derived. The effect of metal and dielectric substrates on the band characteristics is discussed.
Keywords:
zone structure, effective mass, characteristic velocity, nanoribbons, chains, substrate.
Received: 30.09.2019 Revised: 09.01.2020 Accepted: 14.01.2020
Citation:
S. Yu. Davydov, “Low-dimensional silicon-carbide structures: analytical estimates of electron-spectrum characteristics”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 446–451; Semiconductors, 54:5 (2020), 523–528
Linking options:
https://www.mathnet.ru/eng/phts5228 https://www.mathnet.ru/eng/phts/v54/i5/p446
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