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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 4, Pages 372–375
DOI: https://doi.org/10.21883/FTP.2020.04.49144.9301 (Mi phts5246) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Micro- and nanocrystalline, porous, composite semiconductors

Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films

S. A. Fefelova, L. P. Kazakovaab, N. A. Bogoslovskiia, A. B. Bylevb, A. O. Yakubovc

a Ioffe Institute, St. Petersburg
b Saint Petersburg State Forest Technical University under name of S. M. Kirov
c National Research University of Electronic Technology
Full-text PDF (211 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.04.49144.9301
Abstract: The current–voltage characteristics measured on Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can be associated with memory-channel expansion. The memory-channel size is estimated. It is concluded that Ge$_{2}$Sb$_{2}$Te$_{5}$ films can be used as memristors.
Keywords: chalcogenide glassy semiconductors, switching effect, phase-change memory, current filament, multilevel recording.
Received: 31.10.2019
Revised: 25.11.2019
Accepted: 25.11.2019
English version:
Semiconductors, 2020, Volume 54, Issue 4, Pages 450–453
DOI: https://doi.org/10.1134/S1063782620040065
Document Type: Article
Language: Russian
Citation: S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, A. O. Yakubov, “Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 372–375; Semiconductors, 54:4 (2020), 450–453
Citation in format AMSBIB
\Bibitem{FefKazBog20}
\by S.~A.~Fefelov, L.~P.~Kazakova, N.~A.~Bogoslovskii, A.~B.~Bylev, A.~O.~Yakubov
\paper Multilevel recording in Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 4
\pages 372--375
\mathnet{http://mi.mathnet.ru/phts5246}
\crossref{https://doi.org/10.21883/FTP.2020.04.49144.9301}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 4
\pages 450--453
\crossref{https://doi.org/10.1134/S1063782620040065}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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