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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1681–1685
DOI: https://doi.org/10.21883/FTP.2019.12.48627.9151 (Mi phts5335) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Carbon systems

Edge doping in graphene devices on SiO$_{2}$ substrates

G. Yu. Vasil'evaa, D. Smirnovb, Yu. B. Vasil'eva, A. A. Greshnova, R. J. Haugb

a Ioffe Institute, St. Petersburg
b Institut fur Festkorperphysik, Leibniz Universitat Hannover, Hannover, Germany
Full-text PDF (311 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.12.48627.9151
Abstract: The conductivity of single layer and bilayer graphene ribbons 0.5–4 $\mu$m in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO$_{2}$ near the ribbon edges. The method of the formation of abrupt $p$–$n$ junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
Keywords: graphene, edge doping, substrate, defects, plasma etching.
Funding agency Grant number
Russian Science Foundation 17-72-10134
G.Yu. Vasilyeva performed the experimental measurements with the support of the Russian Scientific Foundation, project no. 17-72-10134.
Received: 29.04.2019
Revised: 06.05.2019
Accepted: 06.05.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1672–1676
DOI: https://doi.org/10.1134/S1063782619160292
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. Yu. Vasil'eva, D. Smirnov, Yu. B. Vasil'ev, A. A. Greshnov, R. J. Haug, “Edge doping in graphene devices on SiO$_{2}$ substrates”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1681–1685; Semiconductors, 53:12 (2019), 1672–1676
Citation in format AMSBIB
\Bibitem{VasSmiVas19}
\by G.~Yu.~Vasil'eva, D.~Smirnov, Yu.~B.~Vasil'ev, A.~A.~Greshnov, R.~J.~Haug
\paper Edge doping in graphene devices on SiO$_{2}$ substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1681--1685
\mathnet{http://mi.mathnet.ru/phts5335}
\crossref{https://doi.org/10.21883/FTP.2019.12.48627.9151}
\elib{https://elibrary.ru/item.asp?id=41848197}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1672--1676
\crossref{https://doi.org/10.1134/S1063782619160292}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1681
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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