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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1718–1720
DOI: https://doi.org/10.21883/FTP.2019.12.48633.9238 (Mi phts5341) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

GaAs-based laser diode with InGaAs waveguide quantum wells

N. V. Dikarevaa, B. N. Zvonkova, I. V. Samartseva, S. M. Nekorkina, N. V. Baidusa, A. A. Dubinovab

a National Research Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (109 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.12.48633.9238
Abstract: This paper presents the results of research of electrically pumped InGaAs/GaAs laser on waveguide quantum wells, operating at room temperature. The minimum threshold current was 15 A. The stable lasing at a wavelength of 1010 nm was obtained, and the width of the radiation pattern in a plane perpendicular to the layers of the structure was (10 $\pm$ 2) angular degrees.
Keywords: GaAs, laser diode, waveguide, quantum well, radiation pattern.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation СП-1302.2019.3
Foundation for the Advancement of Theoretical Physics and Mathematics BASIS
This work was supported by the Research Grant of the President of the Russian Federation for Young Scientists and Post-Graduate Students Performing Promising Scientific Research and Developments According to Priority Directions of the Modernization of the Russian Economy SP-1302.2019.3, by the Ministry of Science and Education of the Russian Federation in the scope of the design part of the state order, and “BAZIS” Grant of the Developmental Fund of Theoretical Physics and Mathematics.
Received: 08.08.2019
Revised: 12.08.2019
Accepted: 12.08.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1709–1711
DOI: https://doi.org/10.1134/S1063782619160085
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1718–1720; Semiconductors, 53:12 (2019), 1709–1711
Citation in format AMSBIB
\Bibitem{DikZvoSam19}
\by N.~V.~Dikareva, B.~N.~Zvonkov, I.~V.~Samartsev, S.~M.~Nekorkin, N.~V.~Baidus, A.~A.~Dubinov
\paper GaAs-based laser diode with InGaAs waveguide quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1718--1720
\mathnet{http://mi.mathnet.ru/phts5341}
\crossref{https://doi.org/10.21883/FTP.2019.12.48633.9238}
\elib{https://elibrary.ru/item.asp?id=41848205}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1709--1711
\crossref{https://doi.org/10.1134/S1063782619160085}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1718
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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