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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1207–1211
DOI: https://doi.org/10.21883/FTP.2019.09.48125.08 (Mi phts5403) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion

A. E. Klimovab, A. N. Akimova, I. O. Akhundova, V. A. Golyashovac, D. V. Gorshkova, D. V. Ishchenkoa, G. Yu. Sidorova, S. P. Supruna, A. S. Tarasova, V. S. Epova, O. E. Tereshchenkoac

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
Full-text PDF (667 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2019.09.48125.08
Abstract: The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10$^5$ are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al$_2$O$_3$ layer.
Keywords: PbSnTe:In solid solution, field effect, surface conductivity, MIS structure.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-0575à
Russian Science Foundation 17-12-01047
This study was supported by the Russian Foundation for Basic Research, project no. 17-02-0575a, and by the Russian Science Foundation, project no. 17-12-01047.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1182–1186
DOI: https://doi.org/10.1134/S1063782619090094
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko, “Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1207–1211; Semiconductors, 53:9 (2019), 1182–1186
Citation in format AMSBIB
\Bibitem{KliAkiAkh19}
\by A.~E.~Klimov, A.~N.~Akimov, I.~O.~Akhundov, V.~A.~Golyashov, D.~V.~Gorshkov, D.~V.~Ishchenko, G.~Yu.~Sidorov, S.~P.~Suprun, A.~S.~Tarasov, V.~S.~Epov, O.~E.~Tereshchenko
\paper Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1207--1211
\mathnet{http://mi.mathnet.ru/phts5403}
\crossref{https://doi.org/10.21883/FTP.2019.09.48125.08}
\elib{https://elibrary.ru/item.asp?id=41129863}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1182--1186
\crossref{https://doi.org/10.1134/S1063782619090094}
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