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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1271–1274
DOI: https://doi.org/10.21883/FTP.2019.09.48137.20 (Mi phts5415) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate

A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (925 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.09.48137.20
Abstract: A GaAs/AlAs/GaAs/AlAs/Ge heterostructure grown on a Si/Al$_{2}$O$_{3}$(1$\bar {1}$02) substrate is formed and studied. The Ge buffer layer is produced by the “hot wire” technique, whereas the III–V layers are grown by metal–organic vapor-phase epitaxy. The optical quality of the III–V layers is determined by photoluminescence spectroscopy. Structural studies are performed by high-resolution transmission electron microscopy. The elemental composition is determined by energy-dispersive X-ray spectroscopy. In the study, the possibility of growing a single-crystal GaAs layer on a Si/Al$_2$O$_3$ substrate through AlAs/GaAs/AlAs/Ge buffer layers is shown.
Keywords: heteroepitaxy, transmission electron microscopy, sapphire substrate, GaAs layer, photoluminescence spectra.
Funding agency Grant number
Russian Foundation for Basic Research 18-32-00636
Ministry of Education and Science of the Russian Federation 16.7443.2017/БЧ
The study was supported by the Russian Foundation for Basic Research, project no. 18-32-00636 (MOVPE and PL measurements) and the Ministry of Education and Science of the Russian Federation, project no. 16.7443.2017/BCh.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1242–1245
DOI: https://doi.org/10.1134/S1063782619090227
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov, “Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1271–1274; Semiconductors, 53:9 (2019), 1242–1245
Citation in format AMSBIB
\Bibitem{SusPavShe19}
\by A.~A.~Sushkov, D.~A.~Pavlov, V.~G.~Shengurov, S.~A.~Denisov, V.~Yu.~Chalkov, N.~V.~Baidus, A.~V.~Rykov, R.~N.~Kriukov
\paper Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1271--1274
\mathnet{http://mi.mathnet.ru/phts5415}
\crossref{https://doi.org/10.21883/FTP.2019.09.48137.20}
\elib{https://elibrary.ru/item.asp?id=41129879}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1242--1245
\crossref{https://doi.org/10.1134/S1063782619090227}
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