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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1058–1062
DOI: https://doi.org/10.21883/FTP.2019.08.47995.9093 (Mi phts5429) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures

Yu. N. Khanina, E. E. Vdovina, A. Mishchenkob, K. S. Novoselovb

a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
b School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
Full-text PDF (402 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.08.47995.9093
Abstract: Tunneling and magnetic tunneling are investigated in graphene/$h$-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the $h$-BN barrier, and current caused by their presence is generated.
Keywords: tunneling, magnetic tunneling, van der Waals heterosystems, graphene.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-00475-19-00
Russian Foundation for Basic Research 18-02-00425
Yu.N. Khanin performed this work in the scope of state order no. 075-00475-19-00. E.E. Vdovin thanks the Russian Foundation for Basic Research for support, project no. 18-02-00425.
Received: 06.03.2019
Revised: 10.03.2019
Accepted: 13.03.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1038–1041
DOI: https://doi.org/10.1134/S1063782619080104
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Khanin, E. E. Vdovin, A. Mishchenko, K. S. Novoselov, “Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1058–1062; Semiconductors, 53:8 (2019), 1038–1041
Citation in format AMSBIB
\Bibitem{KhaVdoMis19}
\by Yu.~N.~Khanin, E.~E.~Vdovin, A.~Mishchenko, K.~S.~Novoselov
\paper Observation of regions of negative differential conductivity and current generation during tunneling through zero-dimensional defect levels of the $h$-BN barrier in graphene/$h$-BN/graphene heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1058--1062
\mathnet{http://mi.mathnet.ru/phts5429}
\crossref{https://doi.org/10.21883/FTP.2019.08.47995.9093}
\elib{https://elibrary.ru/item.asp?id=41129831}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1038--1041
\crossref{https://doi.org/10.1134/S1063782619080104}
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  • https://www.mathnet.ru/eng/phts/v53/i8/p1058
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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