Investigation of the current–voltage characteristics of new MnO$_{2}$/GaAs(100) and V$_{2}$O$_{5}$/GaAs(100) heterostructures subjected to heat treatment

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V$_{2}$O$_{5}$ and MnO$_2$ nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I – V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V$_{2}$O$_{5}$ facilitates the more intense (in comparison with MnO$_2$) chemical bonding of arsenic at the internal interface with the formation of As$_2$O$_5$. As a result, thermally oxidized V$_{2}$O$_{5}$/GaAs heterostructures exhibit higher breakdown voltages.