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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1110–1114
DOI: https://doi.org/10.21883/FTP.2019.08.48003.9082 (Mi phts5437) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Micro- and nanocrystalline, porous, composite semiconductors

Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures

M. L. Luninaa, L. S. Luninab, D. L. Alfimovaa, A. S. Pashchenkoa, È. M. Danilinaa, V. V. Nefedovb

a Federal Research Center Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, Russia
b Platov South-Russian State Polytechnic University (SRSTU (NPI)), Novocherkassk, Russia
Full-text PDF (140 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.08.48003.9082
Abstract: The results of growing elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$ thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures is investigated.
Keywords: heterostructures, temperature gradient, liquid-zone thickness, lattice period, thermal-expansion coefficient, diffraction reflection curve, elastic stresses, dislocations, external quantum yield.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 01201354240
Russian Foundation for Basic Research 17-08-01206 А
The work was performed as a part of the State Task of the SSC of the Russian Academy of Sciences for 2019 (project state registration no. 01201354240), state contract no. 16.4757.2017/(8.9), and was also supported by the Russian Foundation for Basic Research, project no. 17-08-01206 A.
Received: 12.02.2019
Revised: 07.03.2019
Accepted: 11.03.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1088–1091
DOI: https://doi.org/10.1134/S1063782619080141
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. L. Lunina, L. S. Lunin, D. L. Alfimova, A. S. Pashchenko, È. M. Danilina, V. V. Nefedov, “Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1110–1114; Semiconductors, 53:8 (2019), 1088–1091
Citation in format AMSBIB
\Bibitem{LunLunAlf19}
\by M.~L.~Lunina, L.~S.~Lunin, D.~L.~Alfimova, A.~S.~Pashchenko, \`E.~M.~Danilina, V.~V.~Nefedov
\paper Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1110--1114
\mathnet{http://mi.mathnet.ru/phts5437}
\crossref{https://doi.org/10.21883/FTP.2019.08.48003.9082}
\elib{https://elibrary.ru/item.asp?id=41129840}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1088--1091
\crossref{https://doi.org/10.1134/S1063782619080141}
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