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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1152–1158
DOI: https://doi.org/10.21883/FTP.2019.08.48010.9103 (Mi phts5444) 		 
This article is cited in 9 scientific papers (total in 9 papers)

Manufacturing, processing, testing of materials and structures

Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties

S. V. Sorokin, P. S. Avdienko, I. V. Sedova, D. A. Kirilenko, M. A. Yagovkina, A. N. Smirnov, V. Yu. Davydov, S. V. Ivanov

Ioffe Institute, St. Petersburg
Full-text PDF (1256 kB) Citations (9)
DOI: https://doi.org/10.21883/FTP.2019.08.48010.9103
Abstract: The results of studies of the structural and optical properties of two-dimensional GaSe layers grown by molecular-beam epitaxy on GaAs(001) and GaAs(112) substrates using a valve cracking cell for the Se source are reported. The influence of the MBE growth parameters (the substrate temperature, Ga flux intensity, Se/Ga incident flux ratio) on the surface morphology of the layers is studied. By means of transmission electron microscopy, electron diffraction technique, and Raman spectroscopy, it is shown that the structure of the GaSe layers corresponds to the $\gamma$-GaSe polytype. From X-ray diffraction analysis, it is established that there exist $\alpha$-Ga$_2$Se$_3$ inclusions in the GaSe layers grown under conditions of high enrichment of the growth surface with Se.
Keywords: GaSe, layered semiconductors, molecular-beam epitaxy, structural properties.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation RFMEFI62117X0018
XRD studies and TEM measurements were performed in the Joint Research Center “Material science and characterization in advanced technology” with partial financial support from the Ministry of Education and Science of the Russian Federation (project id: RFMEFI62117X0018).
Received: 14.03.2019
Revised: 01.04.2019
Accepted: 01.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1131–1137
DOI: https://doi.org/10.1134/S1063782619080189
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Sorokin, P. S. Avdienko, I. V. Sedova, D. A. Kirilenko, M. A. Yagovkina, A. N. Smirnov, V. Yu. Davydov, S. V. Ivanov, “Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1152–1158; Semiconductors, 53:8 (2019), 1131–1137
Citation in format AMSBIB
\Bibitem{SorAvdSed19}
\by S.~V.~Sorokin, P.~S.~Avdienko, I.~V.~Sedova, D.~A.~Kirilenko, M.~A.~Yagovkina, A.~N.~Smirnov, V.~Yu.~Davydov, S.~V.~Ivanov
\paper Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1152--1158
\mathnet{http://mi.mathnet.ru/phts5444}
\crossref{https://doi.org/10.21883/FTP.2019.08.48010.9103}
\elib{https://elibrary.ru/item.asp?id=41129849}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1131--1137
\crossref{https://doi.org/10.1134/S1063782619080189}
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    • This publication is cited in the following 9 articles:
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