Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 13, Pages 1570–1572
DOI: https://doi.org/10.21883/FTP.2018.13.46867.8891 (Mi phts5629) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method

D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov

Saratov State University
Full-text PDF (406 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.13.46867.8891
Abstract: The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.
Received: 16.04.2018
Accepted: 24.04.2018
English version:
Semiconductors, 2018, Volume 52, Issue 13, Pages 1669–1671
DOI: https://doi.org/10.1134/S1063782618130195
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Usanov, A. È. Postelga, A. A. Kalyamin, I. V. Sharov, “Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1570–1572; Semiconductors, 52:13 (2018), 1669–1671
Citation in format AMSBIB
\Bibitem{UsaPosKal18}
\by D.~A.~Usanov, A.~\`E.~Postelga, A.~A.~Kalyamin, I.~V.~Sharov
\paper Measurement of the charge-carrier mobility in gallium arsenide using a near-field microwave microscope by the microwave-magnetoresistance method
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 13
\pages 1570--1572
\mathnet{http://mi.mathnet.ru/phts5629}
\crossref{https://doi.org/10.21883/FTP.2018.13.46867.8891}
\elib{https://elibrary.ru/item.asp?id=36903654}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 13
\pages 1669--1671
\crossref{https://doi.org/10.1134/S1063782618130195}
Linking options:
  • https://www.mathnet.ru/eng/phts5629
  • https://www.mathnet.ru/eng/phts/v52/i13/p1570
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025