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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1414–1420
DOI: https://doi.org/10.21883/FTP.2018.12.46749.28 (Mi phts5652) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation

M. M. Venediktova, E. A. Tarasovab, A. D. Bozhen'kinab, S. V. Obolenskyb, V. V. Elesinc, G. V. Chukovc, I. O. Metelkinc, M. A. Krevskiyd, D. I. Dyukovd, A. G. Fefelovd

a Federal Research and Production Center "Y. Sedakov Research Institute of Measuring Systems", Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod
c National Engineering Physics Institute "MEPhI", Moscow
d OAO Research-and-Production Enterprise "Salut", Nizhny Novgorod, Russia
Full-text PDF (429 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.12.46749.28
Abstract: The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after $\gamma$-neutron irradiation.
Keywords: Microwave Transistors, Radiation-induced Defect Clusters (RDCs), Electron Distribution Profiles, Bulk Ionization Conductivity, Transistor Current.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.2373.2017/4.6
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1518–1524
DOI: https://doi.org/10.1134/S1063782618120266
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420; Semiconductors, 52:12 (2018), 1518–1524
Citation in format AMSBIB
\Bibitem{VenTarBoz18}
\by M.~M.~Venediktov, E.~A.~Tarasova, A.~D.~Bozhen'kina, S.~V.~Obolensky, V.~V.~Elesin, G.~V.~Chukov, I.~O.~Metelkin, M.~A.~Krevskiy, D.~I.~Dyukov, A.~G.~Fefelov
\paper Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1414--1420
\mathnet{http://mi.mathnet.ru/phts5652}
\crossref{https://doi.org/10.21883/FTP.2018.12.46749.28}
\elib{https://elibrary.ru/item.asp?id=36903625}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1518--1524
\crossref{https://doi.org/10.1134/S1063782618120266}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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