Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals

The processes of the formation and annealing of V$_{n}$O$_{m} (n,m\ge2)$ vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm$^{-1}$ as being related to local vibrational modes of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ complexes, respectively.