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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9, Pages 1071–1075
DOI: https://doi.org/10.21883/FTP.2018.09.46232.8852 (Mi phts5741) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si

M. P. Teplyakova, O. S. Kenb, D. N. Goryachevb, O. M. Sreselib

a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
Full-text PDF (371 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2018.09.46232.8852
Abstract: The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with $p$-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
Keywords: Composite Layer, Current Transfer Mechanism, Laser Electrodispersion, Photosensitivity Spectra, Silicon Nanoparticles.
Received: 26.02.2018
Accepted: 12.03.2018
English version:
Semiconductors, 2018, Volume 52, Issue 9, Pages 1193–1197
DOI: https://doi.org/10.1134/S106378261809021X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. P. Teplyakov, O. S. Ken, D. N. Goryachev, O. M. Sreseli, “Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1071–1075; Semiconductors, 52:9 (2018), 1193–1197
Citation in format AMSBIB
\Bibitem{TepKenGor18}
\by M.~P.~Teplyakov, O.~S.~Ken, D.~N.~Goryachev, O.~M.~Sreseli
\paper Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 9
\pages 1071--1075
\mathnet{http://mi.mathnet.ru/phts5741}
\crossref{https://doi.org/10.21883/FTP.2018.09.46232.8852}
\elib{https://elibrary.ru/item.asp?id=36903554}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 9
\pages 1193--1197
\crossref{https://doi.org/10.1134/S106378261809021X}
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  • https://www.mathnet.ru/eng/phts/v52/i9/p1071
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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