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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6, Pages 603–607
DOI: https://doi.org/10.21883/FTP.2018.06.45923.8443 (Mi phts5809) 		 
This article is cited in 12 scientific papers (total in 12 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the properties of II–VI and III–V semiconductor quantum dots

A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy

Saratov State University
Full-text PDF (172 kB) Citations (12)
DOI: https://doi.org/10.21883/FTP.2018.06.45923.8443
Abstract: The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
Funding agency Grant number
Russian Foundation for Basic Research 16-07-00093/16
16-07-00185/16
Received: 31.08.2017
Accepted: 25.09.2017
English version:
Semiconductors, 2018, Volume 52, Issue 6, Pages 750–754
DOI: https://doi.org/10.1134/S1063782618060155
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy, “Study of the properties of II–VI and III–V semiconductor quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 603–607; Semiconductors, 52:6 (2018), 750–754
Citation in format AMSBIB
\Bibitem{MikKabGor18}
\by A.~I.~Mikhailov, V.~F.~Kabanov, I.~A.~Gorbachev, E.~G.~Glukhovskoy
\paper Study of the properties of II--VI and III--V semiconductor quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 6
\pages 603--607
\mathnet{http://mi.mathnet.ru/phts5809}
\crossref{https://doi.org/10.21883/FTP.2018.06.45923.8443}
\elib{https://elibrary.ru/item.asp?id=37051673}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 6
\pages 750--754
\crossref{https://doi.org/10.1134/S1063782618060155}
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  • https://www.mathnet.ru/eng/phts/v52/i6/p603
    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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