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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 516 (Mi phts5842)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Ion synthesis: Si–Ge quantum dots

N. N. Gerasimenkoa, N. S. Balakleyskiya, A. D. Volokhovskiya, D. I. Smirnovb, O. A. Zaporozhana

a National Research University of Electronic Technology, 124498 Moscow, Russia
b Lebedev Physical Institute of the Russian Academy of Sciences, 119333 Moscow, Russia
Full-text PDF (28 kB)
Abstract: We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10$^{14}$ to 10$^{17}$ cm$^{-2}$, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050$^\circ$C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
Funding agency Grant number
Russian Science Foundation 15-19-10054
This work has been supported by the Russian Science Foundation (program 15-19-10054).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 625–627
DOI: https://doi.org/10.1134/S1063782618050081
Bibliographic databases:
Document Type: Article
Language: English
Citation: N. N. Gerasimenko, N. S. Balakleyskiy, A. D. Volokhovskiy, D. I. Smirnov, O. A. Zaporozhan, “Ion synthesis: Si–Ge quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 516; Semiconductors, 52:5 (2018), 625–627
Citation in format AMSBIB
\Bibitem{GerBalVol18}
\by N.~N.~Gerasimenko, N.~S.~Balakleyskiy, A.~D.~Volokhovskiy, D.~I.~Smirnov, O.~A.~Zaporozhan
\paper Ion synthesis: Si--Ge quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 516
\mathnet{http://mi.mathnet.ru/phts5842}
\elib{https://elibrary.ru/item.asp?id=32740380}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 625--627
\crossref{https://doi.org/10.1134/S1063782618050081}
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