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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 469 (Mi phts5865)  
This article is cited in 11 scientific papers (total in 11 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

G. E. Cirlinabcd, R. R. Reznikabcd, I. V. Shtromac, A. I. Khrebtovab, Yu. B. Samsonenkoabc, S. A. Kukushkine, T. Kasamaf, N. Akopianf

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b ITMO University, 197101 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
d Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia
e Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia
f DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark 2800
Full-text PDF (29 kB) Citations (11)
Abstract: III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
Russian Science Foundation 14-12-00393
We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393).
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 462–464
DOI: https://doi.org/10.1134/S1063782618040103
Bibliographic databases:
Document Type: Article
Language: English
Citation: G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 469; Semiconductors, 52:4 (2018), 462–464
Citation in format AMSBIB
\Bibitem{CirRezSht18}
\by G.~E.~Cirlin, R.~R.~Reznik, I.~V.~Shtrom, A.~I.~Khrebtov, Yu.~B.~Samsonenko, S.~A.~Kukushkin, T.~Kasama, N.~Akopian
\paper Hybrid GaAs/AlGaAs nanowire -- quantum dot system for single photon sources
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 469
\mathnet{http://mi.mathnet.ru/phts5865}
\elib{https://elibrary.ru/item.asp?id=32740464}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 462--464
\crossref{https://doi.org/10.1134/S1063782618040103}
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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