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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2, Pages 196–200
DOI: https://doi.org/10.21883/FTP.2018.02.45443.8685 (Mi phts5916) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Surface, interfaces, thin films

Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

Ya. V. Lubyanskiya, A. D. Bondareva, I. P. Sotnikovabc, N. A. Berta, V. V. Zolotareva, D. A. Kirilenkoa, K. P. Kotlyarc, N. A. Pikhtina, I. S. Tarasova

a Ioffe Institute, St. Petersburg
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Full-text PDF (1001 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2018.02.45443.8685
Abstract: In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-03113 офи_м
15-07-06964 А
Russian Academy of Sciences - Federal Agency for Scientific Organizations
Received: 11.07.2017
Accepted: 19.07.2017
English version:
Semiconductors, 2018, Volume 52, Issue 2, Pages 184–188
DOI: https://doi.org/10.1134/S1063782618020070
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200; Semiconductors, 52:2 (2018), 184–188
Citation in format AMSBIB
\Bibitem{LubBonSot18}
\by Ya.~V.~Lubyanskiy, A.~D.~Bondarev, I.~P.~Sotnikov, N.~A.~Bert, V.~V.~Zolotarev, D.~A.~Kirilenko, K.~P.~Kotlyar, N.~A.~Pikhtin, I.~S.~Tarasov
\paper Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 2
\pages 196--200
\mathnet{http://mi.mathnet.ru/phts5916}
\crossref{https://doi.org/10.21883/FTP.2018.02.45443.8685}
\elib{https://elibrary.ru/item.asp?id=32739661}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 2
\pages 184--188
\crossref{https://doi.org/10.1134/S1063782618020070}
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    • This publication is cited in the following 7 articles:
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