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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2, Pages 243–247
DOI: https://doi.org/10.21883/FTP.2018.02.45450.8639 (Mi phts5923) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Carbon systems

Optimization of the parameters of PbSB-based polycrystalline photoresistors

B. N. Miroshnikovab, I. N. Miroshnikovaab, A. I. Popovab

a National Research University "Moscow Power Engineering Institute"
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia
Full-text PDF (131 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.02.45450.8639
Abstract: Photosensitive elements based on polycrystalline lead sulfide layers are investigated. The influence of heterogeneous reactions at the crystallite–environment interfaces on the photosensitive-element characteristics is considered. It is shown that heat treatment in vacuum can be used to significantly change the parameters of the as-fabricated structures and optimize them for specific optoelectronic systems. A model is proposed to explain the nature of the observed phenomena.
Funding agency Grant number
Russian Foundation for Basic Research 16-07-00417-а
Received: 11.05.2017
Accepted: 22.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 2, Pages 231–235
DOI: https://doi.org/10.1134/S1063782618020082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. N. Miroshnikov, I. N. Miroshnikova, A. I. Popov, “Optimization of the parameters of PbSB-based polycrystalline photoresistors”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 243–247; Semiconductors, 52:2 (2018), 231–235
Citation in format AMSBIB
\Bibitem{MirMirPop18}
\by B.~N.~Miroshnikov, I.~N.~Miroshnikova, A.~I.~Popov
\paper Optimization of the parameters of PbSB-based polycrystalline photoresistors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 2
\pages 243--247
\mathnet{http://mi.mathnet.ru/phts5923}
\crossref{https://doi.org/10.21883/FTP.2018.02.45450.8639}
\elib{https://elibrary.ru/item.asp?id=32739668}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 2
\pages 231--235
\crossref{https://doi.org/10.1134/S1063782618020082}
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  • https://www.mathnet.ru/eng/phts/v52/i2/p243
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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