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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12, Pages 1621–1629
DOI: https://doi.org/10.21883/FTP.2017.12.45175.38 (Mi phts5964) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

L. S. Bovkunab, A. V. Ikonnikovac, V. Ya. Aleshkinad, S. S. Krishtopenkoa, A. V. Antonova, K. E. Spirina, N. N. Mikhailovef, S. A. Dvoretskiie, V. I. Gavrilenkoad

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, France
c Lomonosov Moscow State University
d Lobachevsky State University of Nizhny Novgorod
e Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
f Novosibirsk State University
Full-text PDF (949 kB)
DOI: https://doi.org/10.21883/FTP.2017.12.45175.38
URL: https://journals.ioffe.ru/ftp/2017/12/page-1621.html.ru
Abstract: Shubnikov–de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) $\times$ 10$^{11}$ cm$^{-2}$ in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 12, Pages 1562–1570
DOI: https://doi.org/10.1134/S106378261712003X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. S. Bovkun, A. V. Ikonnikov, V. Ya. Aleshkin, S. S. Krishtopenko, A. V. Antonov, K. E. Spirin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, “Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1621–1629; Semiconductors, 51:12 (2017), 1562–1570
Citation in format AMSBIB
\Bibitem{BovIkoAle17}
\by L.~S.~Bovkun, A.~V.~Ikonnikov, V.~Ya.~Aleshkin, S.~S.~Krishtopenko, A.~V.~Antonov, K.~E.~Spirin, N.~N.~Mikhailov, S.~A.~Dvoretskii, V.~I.~Gavrilenko
\paper Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 12
\pages 1621--1629
\mathnet{http://mi.mathnet.ru/phts5964}
\crossref{https://doi.org/10.21883/FTP.2017.12.45175.38}
\elib{https://elibrary.ru/item.asp?id=30729656}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 12
\pages 1562--1570
\crossref{https://doi.org/10.1134/S106378261712003X}
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