Thermoelectric effects in nanoscale layers of manganese silicide

The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn$_{x}$Si$_{1-x}$ nanoscale layer and Mn$_{x}$Si$_{1-x}$/Si superlattice on silicon depending on the growth temperature in the range $T$ = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit $ZT$ = 0.59 $\pm$ 0.06 is found for Mn$_{0.2}$Si$_{0.8}$ at $T$ = 600 K.