Features of the selective manganese doping of GaAs structures

The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the manganese $\delta$ layer and the structureformation temperature are used. It is established that the prepared structures demonstrate the highest electrical activity and have ferromagnetic properties at a growth temperature of $\sim$400$^\circ$C and an impurity content of no higher than 0.2–0.3 monolayers. Studying the grown structures by the methods of reflection spectroscopy, high-resolution transmission electron microscopy, and secondary-ion mass spectrometry shows that use of the above conditions in the case of pulsed laser deposition makes it possible to obtain arsenide–gallium structures, which have good crystalline quality, and manganese is concentrated in them within a thin (7–8 nm) layer without substantial diffusion-induced spreading and segregation.