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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1480–1483
DOI: https://doi.org/10.21883/FTP.2017.11.45094.08
(Mi phts5991)
 

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Inhomogeneous dopant distribution in III–V nanowires

E. D. Leshchenkoab, V. G. Dubrovskiiabc

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ioffe Institute, St. Petersburg
Abstract: We present a theoretical study of the dopant spatial distribution in III–V nanowires grown by molecular beam epitaxy. The evolution of the dopant concentration is obtained by solving the non-stationary diffusion equation. Within the model, it is shown why and how the dopant inhomogeneity appears, as observed experimentally in the case of Be doping of GaAs nanowires and in other material systems.
Received: 27.04.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1427–1430
DOI: https://doi.org/10.1134/S1063782617110173
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. D. Leshchenko, V. G. Dubrovskii, “Inhomogeneous dopant distribution in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1480–1483; Semiconductors, 51:11 (2017), 1427–1430
Citation in format AMSBIB
\Bibitem{LesDub17}
\by E.~D.~Leshchenko, V.~G.~Dubrovskii
\paper Inhomogeneous dopant distribution in III--V nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1480--1483
\mathnet{http://mi.mathnet.ru/phts5991}
\crossref{https://doi.org/10.21883/FTP.2017.11.45094.08}
\elib{https://elibrary.ru/item.asp?id=30546384}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1427--1430
\crossref{https://doi.org/10.1134/S1063782617110173}
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